Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Fundamentals

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off–state current.  C–axis aligned crystalline (CAAC) IGZO enables aggressive down–scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC–IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxidesemiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe  applications of CAAC–IGZO in flat–panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC–IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in–depth understanding of CAAC–IGZO. Explains the fabrication method of CAAC–IGZO thin films. Presents the physical properties and latest data to support high–reliability crystalline IGZO based on hands–on experience. Describes the manufacturing process the CAAC–IGZO transistors and introducesthe device application using CAAC–IGZO. INDICE: Preface .Foreword .1 Layered Compounds in the In2O3 Ga2O3 ZnO System and Related Compounds in the Ternary System .1.1 Introduction .1.2 Synthesis and Phase Equilibrium Diagrams .1.3 Crystal Structures .1.4 Latest Topics in Crystalline IGZO .Appendix 1.A High–angle Annular Dark–field Scanning Transmission Electron Microscopy and Annular Bright–field Scanning Transmission Electron Microscopy .2 Systematic View of Crystalline CAAC–IGZO and Other Crystalline IGZO Thin Films .2.1 Introduction .2.2 Fabrication Process .2.3 Structural Analysis .2.4 Deposition Mechanism .2.5 Structural Stability .2.6 Single–crystal and Polycrystalline IGZO .2.7 Researching More–highly–functional IGZO Material .Appendix 2.A Discovery of CAAC–IGZO .Appendix 2.B Selected Area Electron Diffraction and Nano–beam Electron Diffraction .Appendix 2.C Electron Diffraction Simulation of IGZO .Appendix 2.D Quantitative Evaluation of Alignment of IGZO Films Using NEBD Method .Appendix 2.E Crystallinity of IGZO Thin Film Deposited by Pulsed Laser Deposition .3 Fundamental Properties of IGZO .3.1 Introduction .3.2 Band Structure .3.3 Defect Levels in IGZO Bandgaps .3.4 Origin of Main Donor .3.5 Electrical Conduction Mechanisms .3.6 Summary .Appendix 3.A X–ray Reflectivity and Constant Photocurrent Method .Appendix 3.B First–principles Calculation Methods .4 CAAC–IGZO Field–effect Transistor .4.1 Physics of MOSFETs .4.2 Electrical Characteristics of CAAC–IGZO FET .4.3 Comparison between CAAC–IGZO and Si FETs .4.4 Advantage of CAAC–IGZO as Transistor FET Material .4.5 Summary .5 Device Application using CAAC–IGZO .5.1 Introduction .5.2 CAAC–IGZO TransistorsFETs .5.3 Application to LSIs .5.4 Application to Displays .5.5 Market Prospects .Appendix Unit Prefixes

• ISBN: 978-1-119-24740-1
• Editorial: Wiley–Blackwell
• Encuadernacion: Cartoné
• Páginas: 344
• Fecha Publicación: 14/10/2016
• Nº Volúmenes: 1
• Idioma: Inglés