Learn the basic properties and designs of modern VLSI devices, as well as thefactors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latestdevelopments, such as MOSFET scale length theory, high-field transport model,and SiGe-base bipolar devices. Two new chapters cover read and write operations of commonly used SRAM, DRAM, and non-volatile memory arrays, in addition tosilicon-on-insulator (SOI) devices. 18 useful appendices discuss topics such as spatial variation of quasi-Fermi potentials and power gain of a two-port network. New homework exercises at the end of every chapter engage students withreal-life problems and test their understanding INDICE: Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basicdevice physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performancefactors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performancefactors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1. CMOS process flow; 2. Outline of a process for fabricating modern n-p-n bipolar transistors; 3. Einstein relations; 4. Spatial variation of quasi-Fermi potentials; 5. Generation and recombination processes and space-charge-region current; 6. Diffusion capacitance of a p-n diode; 7. Image-force-induced barrier lowering; 8. Electron-initiated and hole-initiated avalanche breakdown; 9. An analytical solution for the short-channel effect in subthreshold; 10. Generalized MOSFET scale length model; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanical solution in weak inversion; 13. Power gain of a two-portnetwork; 14. Unity-gain frequencies of a MOSFET transistor; 15. Determinationof emitter and base series resistances; 16. Intrinsic-base resistance; 17. Energy-band diagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor; References; Index.
- ISBN: 978-0-521-83294-6
- Editorial: Cambridge University Press
- Encuadernacion: Cartoné
- Páginas: 680
- Fecha Publicación: 06/08/2009
- Nº Volúmenes: 1
- Idioma: Inglés