Vol 2A: Basic Technologies Handbook of Crystal Growth, 2nd Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated. Vol 2B: Growth Mechanisms and Dynamics Handbook of Crystal Growth, 2nd Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the meltHighlights modeling of heat and mass transport dynamicsDiscusses control of convective melt processes by magnetic fields and vibration measuresIncludes imperative information on the segregation phenomenon and validation of compositional homogeneityExamines crystal defect generation mechanisms and their controllabilityIllustrates proper automation modes for ensuring constant crystal growth processExhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries INDICE: Volume 2A Chapter 1: Crystal growth in geology Patterns on the rocks Chapter 2: Czochralski growth of silicon crystals Chapter 3: Liquid encapsulation and related technologies for the Czochralski growth of semiconductor compound Chatper 4: Czochralski growth of oxides and fluorides Chapter 5: Czochralski and flux growth of crystals for lasers and nonlinear optics Chapter 6: Measures to grow bulk single crystals of transparent semicon-ducting and conducting oxides Chapter 7: Floating zone growth of silicon Chapter 8: Floating zone growth of oxides and metallic alloys Chapter 9: Vertical Bridgman growth of bi-nary compound semiconduct. Chapter 10: Multi-crystalline silicon crystal growth for photovoltaic applic Chapter 11: The unidirectional crystallization of metals and alloys (turbine blades) Chapter 12: Crystal growth by traveling hea-ter method (THM) Chapter 13: Growth of bulk nitrides from a Na flux Chapter 14: Hydrothermal growth of crystals design and processing Chapter 15: High-pressure high-temperature solution growth and ammonother-mal synthesis of GaN crystals Chapter 16: Vapor transport growth of wide bandgap materials Chapter 17: Crystal growth of diamond Chapter 18: Wafer processing Volume 2B Chapter 1: Capillarity and shape stability in crystal growth from the melt Chapter 2: Heat transfer analysis and design for bulk crystal growth: Perspectives on the Bridgman method Chapter 3: Fluid dynamics - modelling and analysis Chapter 4: The role of Marangoni convection in crystal growth Chapter 5: Flow control by magnetic fields during crystal growth from melt Chapter 6: Oscillatory-driven fluid flow control during crystal growth from the melt Chapter 7: Segregation and component distribution Chapter 8: Thermal stress and dislocations in bulk crystal growth Chapter 9: Defect generation and interaction during crystal growth Chapter 10: Automation of crystal growth from melt Chapter 11: Fundamentals of crystal growth from solutions Chapter 12: Crystallization mechanisms of high-Tc superconductors Chapter 13: Crystallization processes in gels Chapter 14: Fundamentals of industrial mass crystallization
- ISBN: 978-0-444-63303-3
- Editorial: Elsevier
- Encuadernacion: Cartoné
- Páginas: 1284
- Fecha Publicación: 15/10/2014
- Nº Volúmenes: 1
- Idioma: Inglés