Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures,effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO 2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO 2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform. " A comprehensive overview of III-V compound semiconductor MOSFETs and the most recent breakthroughs The commercialization of compound semiconductor MOSFETs Fundamental and technological aspects of high-k oxides as a natural choice for III-V MOSFETs and thechallenges faced when using high-k oxides INDICE: Towards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga 2 O 3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs.
- ISBN: 978-1-4419-1546-7
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 480
- Fecha Publicación: 23/03/2010
- Nº Volúmenes: 1
- Idioma: Inglés