Nanoscale MOS transistors: semi-Classical transport and applications

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developmentsin the modeling and design of n- and p-MOS nanoscale transistors. A wealth ofapplications, illustrations and examples connect the methods described to allthe latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging fromlow field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results INDICE: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOStransistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integralsand transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.

• ISBN: 978-0-521-51684-6
• Editorial: Cambridge University
• Encuadernacion: Cartoné
• Páginas: 488
• Fecha Publicación: 20/01/2011
• Nº Volúmenes: 1
• Idioma: Inglés