Handbook of nitride semiconductors and devices v. I Materials properties, physics and growth

The Handbook of Nitride Semiconductors and Devices: Volume 1: Materials Properties, Physics and Growth is a comprehensive handbook that discusses the properties, technology, and science of nitrides as well as the devices based on them. The first volume in this three-volume-work provides a comprehensive overview on the properties and growth of Gallium nitride (GaN). INDICE: 1. General Properties of Nitrides 1.1 Crystal Structure of Nitrides 1.2 Gallium Nitride 1.3 Aluminum Nitride 1.4 Indium Nitride 1.5 Ternary and Quaternary Alloys II. Electronic Band Structure and Polarization Effects 2.1 Introduction 2.2. Band structure calculations 2.3. General Strain Considerations 2.4. Effect of Strain on the Band Structure of GaN 2.5. k.p Theory and Quasi-Cubic Model 2.6 Quasi Cubic Approximation 2.7 Temperature dependence of wurtzite GaN bandgap 2.8 Effective mass in wurtzitic GaN 2.9 Sphalerite (zincblende) GaN 2.10 AlN 2.11 InN 2.12. Band Parameters for dilute nitrides 2.13. Confined States 2.14 Polarization Effects 2.15 Thermal mismatch induced strain 2.16.Critical thickness III. Growth and Growth Methods of Nitride Semiconductors 3.1 Substrates for Nitride Epitaxy 3.2 Primer on conventional substrates and their preparation for growth 3.3 GaN Epitaxial Relationship to Substrates 3.4 Nitride Growth Technique 3.5 Growth of Nitrides IV Extended defects, point defects, role of hydrogen, doping including transition metals 4.1 A primer on extended defects 4. 2. TEM analysis of High Nitrogen Pressure Solution Grown (HNPSG) and Hydride Vapor Phase Epitaxy (HVPE) grown GaN 4.3 Point Defects and Autodoping 4.4. Defect Analysis by Deep Level Transient Spectroscopy (DLTS) 4.5. Minority Carrier lifetime 4.6. Positron Annihilation 4.7. Fourier Transform IR (FTIR), Electron Paramagnetic Resonance (EPR) and Optical Detection of magneticResonance (ODMR) 4.8. Role of Hydrogen 4.9. Intentional Doping 4.10. Ion implantation and diffusion for doping 4.11. Summary

• ISBN: 978-3-527-40837-5
• Editorial: Verlag Chemie
• Encuadernacion: Cartoné
• Páginas: 1152
• Fecha Publicación: 26/03/2008
• Nº Volúmenes: 1
• Idioma: Inglés