This handbook treats the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. It presents all thenecessary basics of semiconductor and device physics and engineering togetherwith an extensive reference section. INDICE: Vol. 1: I. General Properties of Nitrides II. Electronic Band Structure and Polarization Effects III. Growth and Growth Methods of Nitride Semiconductors IV. Extended Defects, Point Defects, Role of Hydrogen, Doping including Transition Metals Vol. 2: I. Metal Contacts to GaN and Processing II. Determination of Impurity and Carrier Concentrations III. Carrier Transport in Semiconductors IV. The p n Junction V. Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures Vol. 3: I. Light Emitting Diodes and Lighting II. Semiconductor Lasers III. Field Effect Transistors and Heterojunction Bipolar Transistors
- ISBN: 978-3-527-40797-2
- Editorial: Wiley-VCH
- Encuadernacion: Cartoné
- Páginas: 3000
- Fecha Publicación: 22/10/2008
- Nº Volúmenes: 1
- Idioma: Inglés