Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequateThe emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of thisDraws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications INDICE: 1. ScAlN Epitaxy: Transistors Through High ScN Fraction Thin FilmsMatthew Hardy2. To be determinedAsif Khan3. To be determinedJohn Heron4. Polarity and Ferroelectricity in Wurtzite-Type MaterialsSimon Fichtner5. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonatorsOliver Ambacher and Mohamed Yassine6. 2D ferroelectrics and device applicationsCheng Gong7. Toward New Ferroelectric Nitride Materials and Devices: Aluminum Boron Nitride and Aluminum Scandium Nitride Ferroelectric High Electron Mobility Transistors (Ferro HEMTs)Joseph Casamento and Huili Grace Xing8. Recent advances of epitaxial ferroelectric nitridesZetian Mi
- ISBN: 978-0-443-19390-3
- Editorial: Academic Press
- Encuadernacion: Cartoné
- Páginas: 186
- Fecha Publicación: 22/11/2023
- Nº Volúmenes: 1
- Idioma: Inglés