Silicon carbide v. 1 Growth, defects, and novel applications

We propose to publish a book on SiC in Wiley's Physics list with regard to the high interest in the use of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacturing of controlled graphene. The present volume concentrates on the material and covers methods of epitaxial and bulk growth, and the identification and characterization of defects, and helps the reader to develop an understanding of defects by combining theoretical and experimental approaches.

• ISBN: 978-3-527-40953-2
• Editorial: Wiley-VCH
• Encuadernacion: Cartoné
• Páginas: 500
• Fecha Publicación: 21/10/2009
• Nº Volúmenes: 1
• Idioma: Inglés