Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more. INDICE: 1. Porous SiC Preparation, Characterization and Morphology 1.1 Introduction 1.2 Triangular Porous Morphology in n-type 4H-SiC 1.3 Nano-columnar Pore Formation in 6H SiC 1.4 Summary Acknowledgements References 2. ProcessingPorous SiC: Diffusion, Oxidation, Contact Formation 2.1 Introduction 2.2 Formation of Porous Layer 2.3 Diffusion in Porous SiC 2.4 Oxidation 2.5 Contacts to Porous SiC Acknowledgments References 3. Growth of SiC on Porous SiC Buffer Layers 3.1 Introduction 3.2 SiC CVD Growth 3.3 Growth of 3C-SiC on porous Si via Cold-Wall Epitaxy 3.4 Growth of 3C-SiC on Porous 3C-SiC 3.5 Growth of 4H-SiC on Porous 4H-SiC 3.6 Conclusion Acknowledgements References 4. Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching 4.1 Introduction 4.2 Creation of Porous GaN by Electroless Etching 4.3 Morphology Characterization 4.4 Luminescence of Porous GaN 4.5 Raman Spectroscopy of Porous GaN 4.6 Summary and Conclusions Acknowledgments References 5. Growth of GaN on Porous SiC by Molecular Beam Epitaxy 5.1 Introduction 5.2 Morphology and Preparation of Porous SiC substrates 5.3 MBE growth of GaN on Porous SiC Substrates 5.4 Summary Acknowledgments References 6. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC 6.1 Introduction 6.2 Epitaxy of GaN on Porous SiNx Network 6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN 6.4 Growth of GaN on Porous SiC Acknowledgements References 7. HVPE Growth of GaN on Porous SiC substrates 7.1 Introduction 7.2 Porous Si Substrate Fabrication and Properties 7.3 Epitaxial Growth of GaN Films on Porous SiC Substrates Summary References 8. Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers 8.1 Introduction 8.2 Extended Defects In Epitaxially Grown GaN Thin Layers 8.3 Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN 8.4 Growth of GaN on Porous SiC Substrates 8.5 Growth of GaN on Porous SiN and TiN Interlayers 8.6 Summary Acknowledgments References 9. Electrical Properties of Porous SiC 9.1 Introduction 9.2 Resistivity and Hall Effect 9.3 Deep Level Transient Spectroscopy 9.4 Sample Considerations 9.5 Potential EnergyNear a Pore 9.6 DLTS Data and Analysis References 10. Magnetism of TransitionMetal Doped GaN Nanostructures 10.1 Introduction 10. 2 Mn-Doped GaN Crystal 10. 3 Mn-Doped GaN Thin Films 10.4 Mn- and Cr-Doped GaN One-Dimensional Structures 10.5 N-Doped Mn and Cr C Clusters 10.6 Summary Acknowledgement References 11 SiC Catalysis Technology 11.1 Introduction 11.2 Silicon Carbide Support 11.3 Heat Effects during Reaction 11.4 Reactions on SiC as Catalytic Supports 11.5 Examples of SiC Catalyst Applications 11.6 Prospects and Conclusions References 12. Nanoporous Silicon Carbide as a Semi-Permeable Biomembrane for MedicalUse: Practical and Theoretical Considerations 12. 1. The Rationale for Implantable Semi-Permeable Materials 12. 2. The Biology of Soluble Signaling Proteins in Tissue 12. 3. Measuring Cytokine Secretion In Living Tissues and Organs 12.4. Creating a Biocompatible Tissue Device Interface: Advantages of Silicon Carbide 12.5. The Testing of SiC Membranes for Permeability of Proteins 12.6. Improving the Structure of SiC Membranes for Biosensor Interfaces 12.7. Theoretical Considerations: Modeling Diffusion through a Porous Membrane 12.8. FutureDevelopment: Marriage of Membrane and Microchip 12.9. Conclusions Acknowledgments References

• ISBN: 978-0-470-51752-9
• Editorial: John Wiley & Sons
• Encuadernacion: Cartoné
• Páginas: 328
• Fecha Publicación: 21/03/2008
• Nº Volúmenes: 1
• Idioma: Inglés