High Performance Silicon Imaging: Fundamentals and Applications of CMOS and CCD sensors

High Performance Silicon Imaging covers the fundamentals of silicon image sensors, with a focus on existing performance issues and potential solutions. The book considers several applications for the technology as well. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive, and digital cinema cameras. Part one begins with a review of the fundamental principles of photosensing and the operational principles of silicon image sensors. It then focuses in on charged coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors. The performance issues considered include image quality, sensitivity, data transfer rate, system level integration, rate of power consumption, and the potential for 3D imaging. Part two then discusses how CMOS technology can be used in a range of areas, including in mobile devices, image sensors for automotive applications, sensors for several forms of scientific imaging, and sensors for medical applications. High Performance Silicon Imaging is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor, and electronics industries. Covers the fundamentals of silicon-based image sensors and technical advances, focusing on performance issuesLooks at image sensors in applications such as mobile phones, scientific imaging, TV broadcasting, automotive, and biomedical applications INDICE: Contributor contact detailsWoodhead Publishing Series in Electronic and Optical MaterialsPart I: Fundamentals 1. Fundamental principles of photosensing Abstract:1.1 Introduction1.2 The human vision system1.3 Photometry and radiometry1.4 History of photosensing1.5 Early developments in photodetector technology1.6 References2. Operational principles of silicon image sensors Abstract:2.1 Introduction2.2 Silicon phototransduction2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors2.5 p-n junction-based photodetectors2.6 Noise considerations in pixel structures2.7 High-performance pixel structures2.8 Miniaturization and other development strategies followed in image sensor technologies2.9 Hybrid and 3D detector technologies2.10 Conclusion2.11 References3. Charge coupled device (CCD) image sensors Abstract:3.1 Introduction3.2 Charge coupled device (CCD) design, architecture and operation3.3 Illumination modes3.4 Imaging parameters and their characterization3.5 Conclusion and future trends3.6 References4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors Abstract:4.1 Introduction4.2 Challenges facing a scaled-down frontside illuminated (FSI) sensor4.3 Basics of backside illuminated (BSI) sensor process integration4.4 Interface solutions to BSI sensors4.5 Conclusion4.6 References5. Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors Abstract:5.1 Introduction5.2 High resolution image sensors5.3 Low noise complementary metal-oxide-semiconductor (CMOS) image sensors5.4 High speed image sensors5.5 Low power image sensors5.6 Wide dynamic range sensors5.7 Other high performance designs5.8 Conclusion5.9 References6. Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips Abstract:6.1 Introduction6.2 The concept of a smart camera on a chip6.3 The development of vision chip technology6.4 From special-purpose chips to smart computational chips6.5 From video rate applications to high-speed image processing chips6.6 Future trends6.7 Conclusion6.8 References Part II: Applications 7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices Abstract:7.1 Introduction7.2 Core image/video capture technology requirements and advances in mobile applications7.3 Emerging complementary metal-oxide-semiconductor (CMOS) 'sensor-embedded' technologies7.4 Mobile image sensor architecture and product considerations7.5 Future trends7.6 Conclusion7.7 References8. Complementary metal-oxide-semiconductor (CMOS) image sensors for automotive applications Abstract:8.1 Automotive applications8.2 Vision systems8.3 Sensing systems8.4 Requirements for automotive image sensors8.5 Future trends8.6 References9. Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space Abstract:9.1 Introduction9.2 General requirements for use of complementary metal-oxide-semiconductor (CMOS) sensors in space9.3 Comparison of CMOS sensors and charge coupled devices (CCDs) for space applications9.4 CMOS sensors for space applications9.5 References10. Complementary metal-oxide-semiconductor (CMOS) sensors for high-performance scientific imaging Abstract:10.1 Introduction10.2 Detection in silicon10.3 Complementary metal-oxide-semiconductor (CMOS) sensors for the detection of charged particles10.4 CMOS sensors for X-ray detection10.5 Future trends10.6 Sources of further information and advice10.7 References11. Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM) Abstract:11.1 Introduction11.2 Fluorescence lifetime imaging (FLIM)11.3 Complementary metal-oxide-semiconductor (CMOS) detectors and pixels11.4 FLIM system-on-chip11.5 Future trends11.6 Sources of further information and advice11.7 References12. Complementary metal-oxide-semiconductor (CMOS) X-ray sensors Abstract:12.1 Introduction12.2 Intra-oral and extra-oral dental X-ray imaging12.3 Medical radiography, fluoroscopy and mammography12.4 CMOS image sensor (CIS)-based flat panel display (FPD) technology12.5 Pixel design considerations for CMOS-based FPDs12.6 Key parameters for X-ray sensors12.7 X-ray sensors: types and requirements12.8 Direct X-ray sensors12.9 Conclusion and future trends12.10 References13. Complementary metal-oxide-semiconductor (CMOS) and charge coupled device (CCD) image sensors in high-definition TV imaging Abstract:13.1 Introduction13.2 Broadcast camera performance13.3 Modulation transfer function (MTF), aliasing and resolution13.4 Aliasing and optical low pass filtering13.5 Opto-electrical matching and other parameters13.6 Standards for describing the performance of broadcast cameras13.7 Charge coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) image sensors used in broadcast cameras13.8 Signal-to-noise ratio (SNR)13.9 Bit size, pixel count and other issues13.10 Three-dimensional and ultra high-defi nition (UHD) television13.11 Conclusion13.12 Sources of further information and advice13.13 References14. High-performance silicon imagers and their applications in astrophysics, medicine and other fields Abstract:14.1 Introduction14.2 Solid-state imaging detectors: principles of operation14.3 Scientific imaging detectors14.4 Readout structures14.5 Photon counting detectors14.7 Planetary and astronomy applications14.8 Commercial applications of high-performance imaging detectors14.9 Brief note on biological and medical applications14.10 References and further reading Index

• ISBN: 978-0-08-101362-5
• Editorial: Woodhead Publishing
• Encuadernacion: Rústica
• Páginas: 450
• Fecha Publicación: 30/06/2016
• Nº Volúmenes: 1
• Idioma: Inglés