Fully Depleted Silicon-On-Insulator: Nanodevices, Mechanisms and Characterization

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient For contributions to silicon-on-insulator technology and thin body devices. In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI. --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before. --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it. --Professor Alexander Zaslavsky, Brown University, USA A superbly written book on SOI technology by a master in the field. --Professor Yuan Taur, University of California, San Diego, USA The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book. --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book.  Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications INDICE: Part I Technology 1. FD-SOI technology Part II Mechanisms in FD-SOI MOSFET 2. Coupling effects 3. Scaling effects 4. Floating-body effects Part III Electrical characterization techniques for FD-SOI structures 5. The pseudo-MOSFET 6. Diode-based characterization methods 7. Characterization methods for FD-SOI MOSFET Part IV Innovative FD-SOI devices 8. Electrostatic doping and related devices 9. Band-modulation devices 10. Emerging devices Annex: FD-SOI teasers

• ISBN: 978-0-12-819643-4
• Editorial: Elsevier
• Encuadernacion: Rústica
• Páginas: 384
• Fecha Publicación: 06/08/2021
• Nº Volúmenes: 1
• Idioma: Inglés