Fundamental and technological aspects of extendeddefects in germanium

The aim is to give an overview of the physics of extended defects in Germanium, i..e. dislocations (line defects), grain boundaries, stacking faults, twinsand {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressedsuch as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type Deals with all aspects ofdefects in Ge, an element which is gaining importance again in semiconductor technology Discusses all kinds of expanded defects in Ge, such as dislocation,stacking faults, twins, grain boundaries and bubbles on a crystallographic basis Systematically presentation of defects creation and its influence on device properties INDICE: 1. Dislocations in Germanium: Mechanical Properties.- 2. Electrical and Optical Properties.- 3. Grain Boundaries in Germanium.- 4. Germanium-Based Substrate Defects.- 5. Process-Induced Defects in Germanium.

• ISBN: 978-3-540-85611-5
• Editorial: Springer
• Encuadernacion: Cartoné
• Páginas: 345
• Fecha Publicación: 01/10/2008
• Nº Volúmenes: 1
• Idioma: Inglés