III-Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102 emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronicsOutlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologiesWritten by a panel of academic and industry experts in each field INDICE: 1. Electronic properties of III-nitride materials and basics of III-nitride HEMT Peter Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-nitride microwave power transistors Jeong-sun Moon 4. III-nitride millimeter wave transistors Keisuke Shinohara 5. III-nitride lateral transistor power switch Rongming Chu 6. III-nitride vertical devices Tohru Oka 7. Physics-Based Modeling Ujwal Radhakrishna 8. Thermal management in III-nitride HEMT Avijit Bhunia 9. RF/Microwave applications of III-nitride transistor/wireless power transfer Hooman Kazemi 10. Power electronics application of III-nitride transistors Yifeng Wu 11. III-Nitride N-face transistors Man Hoi Wong 12. III-nitride ultra-wide bandgap electronic devices Robert Kaplar 13. III-nitride P-channel transistors Akira Nakajima 14. Epitaxial transition metal nitrides David Meyer 15. Epitaxial lift-off for III-nitride devices Patrick Fay

• ISBN: 978-0-12-817544-6
• Editorial: Academic Press
• Encuadernacion: Cartoné
• Páginas: 422
• Fecha Publicación: 01/10/2019
• Nº Volúmenes: 1
• Idioma: Inglés