Fundamentals of Power Semiconductor Devices provides an in-depth treatment ofthe physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuseson silicon devices but includes the unique attributes and design requirementsfor emerging silicon carbide devices. Provides extensive analytical formulations for design and analysis of structures. Includes numerical simulation examples to elucidate the operating physics and validate the models. Analyzes device performance attributes to allow practicing engineers in the industry todevelop products. Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field INDICE: Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.
- ISBN: 978-0-387-47313-0
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 700
- Fecha Publicación: 01/04/2008
- Nº Volúmenes: 1
- Idioma: Inglés