The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilizedin microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation. Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets. Includes analytical formulations for all the device structures with validation performed using numerical simulations. Analyzes potential silicon carbide structures that could compete with the silicon devices and includes a comparison of the devices. INDICE: 1 Introduction. 2 Silicon Thyristors. 3 Silicon Carbide Thyristors. 4 Silicon GTO. 5 Silicon IGBT. 6 SiC Planar MOSFET Structures. 7 Silicon Carbide IGBT. 8 Silicon MCT. 9 Silicon BRT. 10 Silicon EST. 11 Synopsis.
- ISBN: 978-1-4614-0268-8
- Editorial: Springer New York
- Encuadernacion: Cartoné
- Páginas: 566
- Fecha Publicación: 29/08/2011
- Nº Volúmenes: 1
- Idioma: Inglés