This book on Double-Gates devices and circuit is unique and aims to reinforcethe synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthroughthey bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes planned for production in 2013 in the current ITRS Roadmap. First book dealing with Technology and Design Interaction Presents a cross-disciplinary based approach to optimize a new and complex technology Covers all aspects of IC Design with advanced technologies: process, device modelling, characterization, and circuit design of analogue, digital and memory circuits Introduces new circuit concepts taking benefit of the double-gate device structures
- ISBN: 978-1-4020-9327-2
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 200
- Fecha Publicación: 01/01/2009
- Nº Volúmenes: 1
- Idioma: Inglés